Educational Background:
M.Sc., Ph.D. (FU Berlin)
Professional Background:
Reader ,S.N. Bose National Centre for Basic Sciences, Kolkata
Important awards and fellowship of academies:
Received DFG research fellowship.
PMSc Associate of SINP.
Received National Merit scholarship.
Main area of work
Ultrafast processes in materials.
Time-dependent density-functional theory.
Physics of Clusters & Nanostructured materials. |
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Significant recent publications:
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Electronic structure, phase stability and resistivity of hybrid hexagonal
Cx(BN)1-x two-dimensional nano material:A first-principles study, R. D'Souza and S. Mukherjee, Physica E, 65, 138 (2015).
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A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer
Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer, S. Ahmad and S. Mukherjee, Graphene, 3, 52 (2014).
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Electronic Properties of Boron and Nitrogen doped graphene: A first
principles study, S. Mukherjee and T.P. Kaloni, Journal of Nanoparticles Research 14, 1059 (2012).
Comparative study of electronic properties of Graphite and Hexagonal Boron Nitride(h-BN) using pseudopotential plane wave method, T.P. Kaloni and S. Mukherjee, Modern Physics Letters B 25, 1855 (2011).
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Femtosecond
Laser induced Ultrafast Melting in Silicon and in Silicon Clusters, S.
Mukherjee, in Nanostructured Materials, Eds. P. Jena et al (Nova, New
York, 2007), pp 423-428.
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Non-orthogonal
tight-binding simulation of silicon clusters, S.N. Behera, B.K. Panda
and S. Mukherjee and P. Entel, in Science and Technology of
Nanostructured Materials, Eds. B.K. Rao, S.M. Bose, M.P. Das and S.N.
Sahu (Nova Science Publishers, New York, 2002), pp 1-7.
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A comparison of different orthogonal tight-binding molecular dynamics simulation methods for silicon clusters.
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