Sugata Mukherjee
    Visiting Associate Professor

   Telephone +91-33-2335 5706/07/08

Educational Background:

  • M.Sc., Ph.D. (FU Berlin)
  • Professional Background:

  • Reader ,S.N. Bose National Centre for Basic Sciences, Kolkata
  • Important awards and fellowship of academies:

  • Received DFG research fellowship.
  • PMSc Associate of SINP.
  • Received National Merit scholarship.
  • Main area of work

  • Ultrafast processes in materials.
  • Time-dependent density-functional theory.
  • Physics of Clusters & Nanostructured materials.
    • Surface science.

        Significant recent publications:

    • Electronic structure, phase stability and resistivity of hybrid hexagonal Cx(BN)1-x two-dimensional nano material:A first-principles study, R. D'Souza and S. Mukherjee, Physica E, 65, 138 (2015).
    • A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer, S. Ahmad and S. Mukherjee, Graphene, 3, 52 (2014).
    • Electronic Properties of Boron and Nitrogen doped graphene: A first principles study, S. Mukherjee and T.P. Kaloni, Journal of Nanoparticles Research 14, 1059 (2012).
    • Comparative study of electronic properties of Graphite and Hexagonal Boron Nitride(h-BN) using pseudopotential plane wave method, T.P. Kaloni and S. Mukherjee, Modern Physics Letters B 25, 1855 (2011).
    • Femtosecond Laser induced Ultrafast Melting in Silicon and in Silicon Clusters, S. Mukherjee, in Nanostructured Materials, Eds. P. Jena et al (Nova, New York, 2007), pp 423-428.
    • Non-orthogonal tight-binding simulation of silicon clusters, S.N. Behera, B.K. Panda and S. Mukherjee and P. Entel, in Science and Technology of Nanostructured Materials, Eds. B.K. Rao, S.M. Bose, M.P. Das and S.N. Sahu (Nova Science Publishers, New York, 2002), pp 1-7.
    • A comparison of different orthogonal tight-binding molecular dynamics simulation methods for silicon clusters.
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