Atindra Nath Pal
   Assistant Professor, SNBNCBS
   







   atin@bose.res.in
   www.bose.res.in
   Telephone +91-33-2335 5706/07/08 (extn: 437)
 

Educational Background:

  • B.Sc. in Physics, Ramakrishna Mission Vidyamandira, Belur Math, West Bengal, University of Calcutta (2004)
  • M.Sc. in Physics, Department of Physics, IIT Kanpur (2006)
  • Ph.D in Physics, Department of Physics, IISc, Bangalore (2012)
  • Professional Background:

  • Postdoctoral Research Fellow, NanoPhysics Group, ETH Zurich, Switzerland (2012 - 2015)
  • Postdoctoral Research Fellow (Faculty Dean Fellowship), Oren Tals Group, Chemical Physics, Weizmann Institute of Science, Israel (2015-2017)
  • Assistant Professor, Department of Physics, IIT Kharagpur (Jan, 2017-Dec, 2017)
  • Assistant Professor, SNBNCBS (Dec, 2017 - Present)
  • Important awards and fellowship of academies:

  • Young Physicist Award-2011, from Indian Physical Society (2011).
  • Prof. Anil Kumar medal for best experimental thesis in physics in 2011 from IISc, Bangalore
  • Main area of work:

    Our research mainly focuses on studies of the mechanisms of charge transport, spin transport and heat transport at the nano-scale down to single atom. These understanding may lead to various applications ranging from ultralow noise electronics, sensors to device miniaturization. The specific goals are given below:

     

  • Charge/Spin transport in emerging new low dimensional materials like graphene, MOS2, WSe2, Black Phosphorous, Carbon Nanotube and nanowires.
  • Hybrid electronic devices using molecules and various 2d and 1d materials
  • Understanding charge/spin/heat transport in single molecule using mechanical break junction
  • Noise- measurements to understand various physical phenomena
  • Magnetotransport at low temperature (down to ~ mK)
  • Bio-electronics: understanding charge transport of biomolecules like protein, DNA etc
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      Significant Recent Publications:

     

        [Google Scholar]

    • Nonmagnetic single-molecule spin-filter based on quantum interference, Atindra Nath Pal, Dongzhe Li, Soumyajit Sarkar, Sudipto Chakrabarti, Ayelet Vilan, Leeor Kronik, Alexander Smogunov & Oren Tal Nature Communications, 10, 5565 (2019)
    • Electronic conduction during the premature formation stages of a single molecule junction, Atindra Nath Pal , Tal Klein, Ayelet Vilan, Oren Tal, Beilstein J. Nanotechnol. 2018, 9, 1471-1477. doi:10.3762/bjnano.9.138
    • Non-local transport via edge-states in InAs/GaSb coupled quantum wells by Susanne Mueller, Atindra Nath Pal, Matija Karalic, Thomas Tschirky, Christophe Charpentier, Werner Wegscheider, Klaus Ensslin, Thomas Ihn Phys. Rev. B (R) 92, 081303 - (2015)
    • Insulating State and Giant Nonlocal Response in an InAs/GaSb Quantum Well in the Quantum Hall Regime, Fabrizio Nichele, Atindra Nath Pal, Patrick Pietsch, Thomas Ihn, Klaus Ensslin, Christophe Charpentier, and Werner Wegscheider, Physical Review Letters 112, 036802 (2014).
    •  Fermi-Edge Transmission Resonance in Graphene Driven by a Single Coulomb Impurity by Paritosh Karnatak, Srijit Goswami, Vidya Kochat, Atindra Nath Pal, and Arindam Ghosh Phys. Rev. Lett. 113, 026601- (2014)
    • Direct Observation of Valley Hybridization and Universal Symmetry of Graphene with Mesoscopic Conductance Fluctuations by Atindra Nath Pal, Vidya Kochat, and Arindam Ghosh Phys. Rev. Lett. 109, 196601 - (2012)
    • Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion by Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat, Sneha E. S., Arjun B.S., Srinivasan Raghaban, and Arindam Ghosh, ACS Nano 5, 2075 - 2081 - (2011)
    • The nature of electronic states in atomically thin MoS2 field effect transistors by Subhamoy Ghatak, Atindra Nath Pal and Arindam Ghosh,  ACS Nano 5, 7707 - 7712- (2011)
    • Resistance noise in electrically biased bilayer graphene by Atindra Nath Pal and Arindam Ghosh Phys. Rev. Lett. 102, 126805 - (2009)
    • Ultralow noise field-effect transistor from multilayer graphene by Atindra Nath Pal and Arindam Ghosh Appl. Phys. Lett. 95, 082105 - (2009)
     
     
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